*
-
RAM
DRAM - EDO
4M (256K x 16)
35ns
并联
3 V ~ 3.6 V
-40°C ~ 85°C
*
IC DRAM 4M 35NS 40TSOP
MIC59150YME TR
DSEI2X61-02A
TLC1549IP
NC7SZ175P6X